the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for ina ccuracies or ommisions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at th e user?s own risk. prices and specifications are subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microdevices does not authorize or warrant any sirenza microdevices product for use in life-support devices and/or systems. copyright 2002 sirenza microdevices, inc. all worldwide rights reserved. 303 south technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 1 eds-103087 rev e sirenza microdevices? SGB-4333 is a high performance sige hbt mmic amplifier utilizing a darlington configura- tion with an active bias network. the active bias network provides stable current over temperature and process beta variations. designed to run directly from a 3v to 5v supply the SGB-4333 does not require a drop resistor as com- pared to typical darlington amplifiers. this robust amplifier features a class 1c esd rating, low thermal resistance , and unconditional stability. the SGB-4333 product is designed for high linearity 3v gain block applications that require small size and minimal external components. it is on chip matched to 50 ohm and an external bias inductor choke is required for the application band. key specifications symbol parameters: test conditions z 0 = 50 w , v cc = 3.0v, ic = 56ma, t = 30oc) unit min. typ. max. f o frequency of operation mhz dc 3000 s 21 small signal gain ? 850mhz db 17.5 small signal gain ? 1950mhz 13.0 14.5 16.0 small signal gain ? 2400mhz 14.0 p 1db output power at 1db compression ? 850mhz dbm 11.5 output power at 1db compression ? 1950mhz 8.5 10.0 output power at 1db compression ? 2400mhz 9.5 oip3 output ip3 ? 850mhz 25.0 output ip3 ? 1950mhz db 20.0 22.5 output ip3 ? 2400mhz 21.0 irl input return loss @ 1950mhz db 8.5 10.5 orl output return loss @1950mhz db 8.5 10.5 ic current ma 48 56 62 nf noise figure @1950mhz db 4.0 5.0 r th, j-l thermal resistance (junction - lead) oc/w 76 functional block diagram SGB-4333 dc ? 3 ghz active bias gain block product features applications ? high reliability sige hbt technology ? robust class 1c esd ? simple and small size ? p1db = 10.0dbm @ 1950mhz ? ip3 = 22.5 dbm @ 1950mhz ? low thermal resistance = 76 c/w ? 3v battery operated applications ? lo buffer amp ? rf pre-driver and rf receive path product description vcc nc nc gnd nc nc nc vbias nc nc nc rfin nc rfout nc nc active bias
303 south technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 2 eds-103087 rev e SGB-4333 dc-3ghz active bias gain block simplified device schematic 16 1 4 5 8 9 12 13 15 14 2 3 11 10 6 7 active bias absolute maximum ratings parameters value unit current (ic total) 120 ma device voltage (v d ) 5 v power dissipation 0.4 w operating lead temperature (t l ) -40 to +85 oc rf input power 20 dbm storage temperature range -40 to +150 oc operating junction temperature (t j ) +150 oc operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d < (t j - t l ) / r th? j-l detailed performance table: vcc=3v, ic=56ma, t=25c, z=50ohms symbol parameter units 100mhz 500mhz 850mhz 1950mhz 2400mhz 3500mhz g small signal gain db 18.1 17.8 17.5 14.5 14.0 11.8 oip3 output 3rd order intercept point dbm 26.5 25.0 22.5 21.0 p1db output power at 1db compression dbm 12.0 11.5 10.0 9.5 irl input return loss db 17.3 15.6 14.2 10.5 10.7 8.1 orl output return loss db 13.4 12.7 12.0 10.5 11.0 12.0 s12 reverse isolation db 21.1 21.5 21.9 22.7 22.8 22.9 nf noise figure db 5.0 3.5 3.5 4.0 4.4 5.0 pin out description pin # function description 1,2,4, 6, 7,8,11, 12,14 nc these are no connect pins. leave them unconnected on the pc board. 3 rfin rf input pin. a dc voltage should not be connected externally to this pin 5 gnd an extra ground pin that is connected to the backside exposed paddle. connection is optional. 10 rfout rf output pin. bias is applied to the darlington stage thru this pin. 13 vbias this pin sources the current from the active bias circuit. connect to pin 10 thru an inductor choke. 16 vcc this is vcc for the active bias circuit. back- side gnd the backside exposed paddle is the main electrical gnd and requires multiple vias in the pc board to gnd. it is also the main thermal path. caution: esd sensitive appropriate precaution in handling, packaging and testing devices must be observed.
303 south technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 3 eds-103087 rev e SGB-4333 dc-3ghz active bias gain block evaluation board data (vcc=v bias = 3.0v, i c = 56ma) bias tee substituted for dc feed inductor (l1) gain vs frequency 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 0.4 0.9 1.4 1.9 2.4 frequency (ghz) gain (db) +25c +85c -40c oip3 vs. frequency 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 0.4 0.9 1.4 1.9 2.4 frequency (ghz) oip3 (dbm) +25c +85c -40c p1db vs. frequency 7.0 8.0 9.0 10.0 11.0 12.0 13.0 0.4 0.9 1.4 1.9 2.4 frequency (ghz) p1db (dbm) +25c +85c -40c noise figure vs. frequency 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 frequency (ghz) noise figure (db) +25c +85c -40c ic vs. temperature 0.0550 0.0560 0.0570 0.0580 0.0590 0.0600 0.0610 0.0620 0.0630 +85c +25c -40c temperature ic (ma) current vs. voltage 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 0.090 0.100 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 vc (volts) ic (a)
303 south technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 4 eds-103087 rev e SGB-4333 dc-3ghz active bias gain block evaluation board data (vcc=v bias = 3.0v, i c = 56ma) bias tee substituted for dc feed inductor (l1) l s 21 l vs. frequency 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s 21 (db) +25c +85c -40c l s 11 l vs. frequency -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s 11 (db) +25c +85c -40c l s12 l vs. frequency -30.0 -28.0 -26.0 -24.0 -22.0 -20.0 -18.0 -16.0 -14.0 -12.0 -10.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s 12 (db) +25c +85c -40c l s22 l vs. frequency -16.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) s 22 (db) +25c +85c -40c
303 south technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 5 eds-103087 rev e SGB-4333 dc-3ghz active bias gain block typical evaluation board schematic for 3.0v rfin rfout vcc nc nc optional gnd nc nc nc vbias nc nc nc rfin nc rfout nc nc vcc c1 c2 c3 c4 l1 1 1 6 1 c3 c2 c1 l1 c4 evaluation board - board material getek, 31mil thick, dk=4.2, 1 oz. copper * c4 is optional depending on application and filtering. not required for sgb device operation. component values by band designator 500mhz 850mhz 1950mhz 2400mhz c3 1000pf 1000pf 1000pf 1000pf c4* 1uf 1uf 1uf 1uf c1, c2 220pf 68pf 43pf 22pf l1 68 nh 33nh 22nh 18nh note: the amplifier can be run from a 5v supply by simply inserting a 33 ohm resistor in series with vcc.
303 south technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 6 eds-103087 rev e SGB-4333 dc-3ghz active bias gain block package outline drawing (dimensions in mm) part number ordering information part number reel size devices/reel SGB-4333 13? 3000 part marking the part will be symbolized with an ?SGB-4333? mark- ing designator on the top surface of the package. 1.20 [0.047] 0.50 [0.020] 0.25 [0.010] 1.20 [0.047] 0.46 [0.018] 0.53 [0.021] 3.17 [0.125] recommended land pattern (dimensions in mm[in].): recommended pcb soldermask (smobc) for land pattern(dimensions in mm[in]): 1.58 [0.062] 0.50 [0.020] 0.26 [0.010] 0.38 [0.015] 0.29 [0.011] 0.21 [0.008] 1.58 [0.062] 0.75 [0.030] ?0.38 [?0.015] 0.005 chamfer (8pl) plated thru (4pl)
|
